S9014 NPN Bipolar Transistor

10.00

Specifications:

  • Product Category: Bipolar Transistors – BJT
  • Configuration:    Single
  • Transistor Polarity: NPN
  • Collector- Base Voltage VCBO:    50 V
  • Collector- Emitter Voltage VCEO Max:    45 V
  • Emitter- Base Voltage VEBO:5 V
  • Collector-Emitter Saturation Voltage: 0.14 V
  • Maximum DC Collector Current:     0.1 A
  • Gain Bandwidth Product fT: 270 MHz
  • Maximum Operating Temperature:+ 150 ° C
  • Mounting Style:    Through Hole
  • Package / Case:    TO-92
  • DC Collector / Base Gain hfe Min: 60
  • DC Current Gain hFE Max: 1000
  • Maximum Dissipation:    450 mW
  • Minimum Operating Temperature: – 55 C

Package Included:

1 x S9014 NPN Bipolar Transistor